Type Designator: 2SK3878 Marking Code: K3878 Type of Transistor: MOSFET Type of Control Channel: N -Channel. MOSFET is widely used for switching and amplifying electronic signals. 2SK3878 (K3878) TO-3P N-CH MOSFET. Sunrom Product Code for Ordering: 5079. 2PCS MOSFET 2SK3878 K3878 TOS N-Ch FET RDS TO-3P IC NEW. $1.96 + $3.45 shipping. 1pcs TK7P60W MOSFET TOSHIBA for Philips Emerson BA3AFCF01022 BA4AFCG0201 2.
Type Designator: 2SK3878
Marking Code: K3878
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: SC65TO3P
2SK3878 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3878 Datasheet (PDF)
0.1. 2sk3878.pdf Size:205K _toshiba
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.2. 2sk3878.pdf Size:216K _inchange_semiconductor
isc N-Channel Mosfet Transistor 2SK3878FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for a
8.1. 2sk3879.pdf Size:292K _toshiba
2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolu
8.2. 2sk3875-01.pdf Size:101K _fuji
2SK3875-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
8.3. 2sk3871-01mr.pdf Size:96K _fuji
2SK3871-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
8.4. 2sk3874-01r.pdf Size:109K _fuji
2SK3874-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o
8.5. 2sk3876-01r.pdf Size:100K _fuji
2SK3876-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe
8.6. 2sk3872-01l-s-sj.pdf Size:153K _fuji
2SK3872-01L,S,SJN-CHANNEL SILICON POWER MOSFET200406Outline Drawings (mm)FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings
8.7. 2sk3870-01.pdf Size:95K _fuji
2SK3870-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
8.8. 2sk3873-01.pdf Size:112K _fuji
2SK3878(F) - Toshiba - Power MOSFET, N Channel, 900 V
2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
8.9. 2sk387.pdf Size:235K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK387DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed applications.such as off-line switching power supplies , UPS,AC and DCmotor controls,rel
Datasheet: 2SK3757, 2SK3766, 2SK3767, 2SK3798, 2SK3799, 2SK3842, 2SK3843, 2SK3845, 2SK4106, 2SK3880, 2SK3940, 2SK4003, 2SK4013, 2SK4014, 2SK4017, 2SK4023, 2SK4026.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Part Number : K3878
Function : Silicon N-Channel MOS Field Effect Transistor
Package : TO-3P type
Manufacturers : Toshiba
K3878 Mosfet Price
Image
Application : Switching Regulator
Features for K3878
1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
Cached
2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C) : PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ
9. Channel temperature : Tch = 150°C
Pinouts :
K3878 Datasheet
Other data sheets within the file : 2SK3878
Related articles across the web